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Si6967DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
10
1
T J = 150 °C
T J = 25 °C
0.06
0.05
0.04
0.03
0.02
0.01
0
I D = 5.0 A
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
0.8
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
30
V GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
I D = 250 μA
25
20
0.2
15
0.0
10
- 0.2
- 0.4
- 0.6
5
0
- 50
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
30
2
1
T J - Temperature (°C)
Threshold Voltage
Duty Cycle = 0.5
0.2
0.1
Time (s)
Single Pulse Power
Notes:
P DM
0.1
0.05
t 1
t 2
1. Duty Cycle, D =
t 1
t 2
0.02
Single Pulse
2. Per Unit Base = R thJA = 115 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70811 .
www.vishay.com
4
Document Number: 70811
S-81221-Rev. D, 02-Jun-08
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